Rohm and Haas Electronic Materials Celebrates Research and Development Center Expansion in Chonan, Korea

Shanghai, China, June 5, 2007 – Rohm and Haas Electronic Materials (NYSE: ROH), a leading supplier of advanced lithography materials for the semiconductor industry, celebrated the official opening of its new five-story Chonan R&D Center on Tuesday, May 29, with local customers and government officials among the guests.

Part of the recent $30 million expansion of the company’s Microelectronic Technologies site in Chonan, the R&D center adds to Rohm and Haas Electronic Materials’ global advanced research and development capabilities for 193 nm photoresists as well as organic and silicon based anti-reflectants. The staff of researchers and engineers now in place at the new facility has on site advanced 193 nm and 248 nm lithography clusters, along with leading-edge defect and metrology tools.

“We are pleased to see our expansion plans proceeding quickly,” said Dr. Hoe-Sik Chung, president of the Microelectronic Technologies for Rohm and Haas Electronic Materials Korea. “The acceleration of our research programs in Chonan begins here with this opening ceremony. Coupled with our manufacturing capabilities of advanced products, the growing strength of our R&D infrastructure makes us well-positioned to serve the semiconductor materials needs in this region.”

“We deploy our technology resources to address local customer needs,” said Dr. Peter Trefonas, director of Research and Development for Microelectronic Technologies. “Our customers in the region will benefit from the responsiveness and close contact with our technologists that the new Chonan R&D Center will provide.”

Further growth of the R&D and engineering resources at the Chonan site will continue throughout 2007 as programs ramp up to meet the local and global demand for next-generation semiconductor materials.

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